Technical parameters/number of channels: 1
Technical parameters/dissipated power: 1W (Ta)
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/Input capacitance (Ciss): 350pF @25V(Vds)
Technical parameters/dissipated power (Max): 1W (Ta)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: HVMDIP-4
External dimensions/length: 6.29 mm
External dimensions/width: 5 mm
External dimensions/height: 3.37 mm
External dimensions/packaging: HVMDIP-4
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFDC20PBF
|
Vishay Precision Group | 类似代替 |
MOSFET N-CH 600V 320mA 4-DIP
|
|||
IRFDC20PBF
|
International Rectifier | 类似代替 | DIP |
MOSFET N-CH 600V 320mA 4-DIP
|
||
IRFDC20PBF
|
Vishay Siliconix | 类似代替 | DIP-4 |
MOSFET N-CH 600V 320mA 4-DIP
|
||
IRFDC20PBF
|
VISHAY | 类似代替 | DIP-4 |
MOSFET N-CH 600V 320mA 4-DIP
|
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