Technical parameters/rated voltage (DC): 600 V
Technical parameters/rated current: 320 mA
Technical parameters/number of pins: 4
Technical parameters/drain source resistance: 4.4 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1 W
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/leakage source breakdown voltage: 600 V
Technical parameters/Continuous drain current (Ids): 320 mA
Technical parameters/rise time: 23 ns
Technical parameters/Input capacitance (Ciss): 350pF @25V(Vds)
Technical parameters/rated power (Max): 1 W
Technical parameters/descent time: 25 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: DIP-4
External dimensions/packaging: DIP-4
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFDC20
|
Vishay Semiconductor | 类似代替 |
MOSFET N-CH 600V 320mA 4-DIP
|
|||
IRFDC20
|
Vishay Siliconix | 类似代替 | HVMDIP-4 |
MOSFET N-CH 600V 320mA 4-DIP
|
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