Technical parameters/drain source resistance: 4.4 Ω
Technical parameters/dissipated power: 1 W
Technical parameters/input capacitance: 350pF @25V
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/leakage source breakdown voltage: 600 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 4
External dimensions/length: 6.29 mm
Physical parameters/operating temperature: -55℃ ~ 150℃
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFDC20
|
Vishay Semiconductor | 类似代替 |
MOSFET N-CH 600V 320mA 4-DIP
|
|||
IRFDC20
|
Vishay Siliconix | 类似代替 | HVMDIP-4 |
MOSFET N-CH 600V 320mA 4-DIP
|
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