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Description MOSFET, Power; N-Ch; VDSS 600V; RDS(ON) 4.4Ω; ID 0.32A; HD-1; PD 1W; VGS +/-20V; -55
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Packaging method
Standard packaging quantity 1
7.44  yuan 7.44yuan
10+:
$ 8.9256
100+:
$ 8.4793
500+:
$ 8.1818
1000+:
$ 8.1669
2000+:
$ 8.1074
5000+:
$ 8.0330
7500+:
$ 7.9735
10000+:
$ 7.9438
Quantity
10+
100+
500+
1000+
2000+
Price
$8.9256
$8.4793
$8.1818
$8.1669
$8.1074
Price $ 8.9256 $ 8.4793 $ 8.1818 $ 8.1669 $ 8.1074
Start batch production 10+ 100+ 500+ 1000+ 2000+
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(4466) Minimum order quantity(10)
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Technical parameters/drain source resistance: 4.4 Ω

Technical parameters/dissipated power: 1 W

Technical parameters/input capacitance: 350pF @25V

Technical parameters/drain source voltage (Vds): 600 V

Technical parameters/leakage source breakdown voltage: 600 V

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 4

External dimensions/length: 6.29 mm

Physical parameters/operating temperature: -55℃ ~ 150℃

Compliant with standards/RoHS standards: RoHS Compliant

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