Technical parameters/rated voltage (DC): 600 V
Technical parameters/rated current: 320 mA
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.30 W
Technical parameters/leakage source breakdown voltage: 600 V
Technical parameters/Continuous drain current (Ids): 320 mA
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: DIP
External dimensions/packaging: DIP
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFDC20
|
Vishay Semiconductor | 类似代替 |
MOSFET N-CH 600V 320mA 4-DIP
|
|||
IRFDC20
|
Vishay Siliconix | 类似代替 | HVMDIP-4 |
MOSFET N-CH 600V 320mA 4-DIP
|
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