Technical parameters/rated voltage (DC): -200 V
Technical parameters/rated current: -11.0 A
Technical parameters/rated power: 125 W
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.5 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 125 W
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/leakage source breakdown voltage: -200 V
Technical parameters/Continuous drain current (Ids): -11.0 A
Technical parameters/rise time: 43 ns
Technical parameters/Input capacitance (Ciss): 1200pF @25V(Vds)
Technical parameters/rated power (Max): 125 W
Technical parameters/descent time: 38 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 125 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.41 mm
External dimensions/width: 4.7 mm
External dimensions/height: 9.01 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Minimum Packaging: 50
Other/Manufacturing Applications: power management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Customs Information/Hong Kong Import and Export License: NLR
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF9640
|
Major Brands | 类似代替 | TO-220 |
MOSFET P-CH 200V 11A TO-220AB
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IRF9640
|
International Rectifier | 类似代替 |
MOSFET P-CH 200V 11A TO-220AB
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IRF9640
|
Intersil | 类似代替 |
MOSFET P-CH 200V 11A TO-220AB
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|||
IRF9640PBF
|
Vishay Semiconductor | 功能相似 | TO-220 |
Power Field-Effect Transistor, 11A I(D), 200V, 0.5Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
|
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IRF9640PBF
|
Vishay Precision Group | 功能相似 | TO-220 |
Power Field-Effect Transistor, 11A I(D), 200V, 0.5Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
|
||
IRF9640PBF
|
Vishay Siliconix | 功能相似 | TO-220-3 |
Power Field-Effect Transistor, 11A I(D), 200V, 0.5Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
|
||
IRF9640PBF
|
VISHAY | 功能相似 | TO-220-3 |
Power Field-Effect Transistor, 11A I(D), 200V, 0.5Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
|
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