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Model IRF9640PBF

Description VISHAY IRF9640PBF 晶体管, MOSFET, P沟道, 11 A, -200 V, 500 mohm, -10 V, -4 V

Brand: Vishay Semiconductor

Packaging TO-220

Delivery time

Packaging method Tube

Standard packaging quantity 1

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Technical parameters/rated voltage (DC):	-200 V
Technical parameters/rated current:	-11.0 A
Technical parameters/rated power:	125 W
Technical parameters/number of pins:	3
Technical parameters/drain source resistance:	0.5 Ω
Technical parameters/polarity:	P-Channel
Technical parameters/dissipated power:	125 W
Technical parameters/drain source voltage (Vds):	200 V
Technical parameters/Leakage source breakdown voltage:	-200 V
Technical parameters/Continuous drain current (Ids):	-11.0 A
Technical parameters/rise time:	43 ns
Technical parameters/Input capacitance (Ciss):	1200pF @25V(Vds)
Technical parameters/descent time:	38 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	125 W
Encapsulation parameters/installation method:	Through Hole
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-220
Dimensions/Length:	10.51 mm
Dimensions/Width:	4.7 mm
Dimensions/Height:	15.49 mm
Dimensions/Packaging:	TO-220
Physical parameters/operating temperature:	-55℃ ~ 150℃
Other/Packaging Methods:	Tube
Other/Manufacturing Applications:	Power Management
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC

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