Technical parameters/rated voltage (DC): -200 V
Technical parameters/rated current: -11.0 A
Technical parameters/drain source resistance: 500 mΩ
Technical parameters/dissipated power: 125 W
Technical parameters/rise time: 43.0 ns
Package parameters/number of pins: 3
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF9640
|
Major Brands | 功能相似 | TO-220 |
200V, P-channel power MOSFET
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IRF9640
|
International Rectifier | 功能相似 |
200V, P-channel power MOSFET
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IRF9640
|
Intersil | 功能相似 |
200V, P-channel power MOSFET
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IRF9640PBF
|
Vishay Semiconductor | 功能相似 | TO-220 |
Power Field-Effect Transistor, 11A I(D), 200V, 0.5Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
|
||
IRF9640PBF
|
Vishay Precision Group | 功能相似 | TO-220 |
Power Field-Effect Transistor, 11A I(D), 200V, 0.5Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
|
||
IRF9640PBF
|
Vishay Siliconix | 功能相似 | TO-220-3 |
Power Field-Effect Transistor, 11A I(D), 200V, 0.5Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
|
||
IRF9640PBF
|
VISHAY | 功能相似 | TO-220-3 |
Power Field-Effect Transistor, 11A I(D), 200V, 0.5Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
|
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