Technical parameters/drain source resistance: | 0.5 Ω |
|
Technical parameters/dissipated power: | 125 W |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-220 |
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Dimensions/Length: | 10.51 mm |
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Dimensions/Packaging: | TO-220 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF9640
|
Major Brands | 类似代替 | TO-220 |
MOSFET P-CH 200V 11A TO-220AB
|
||
IRF9640
|
International Rectifier | 类似代替 |
MOSFET P-CH 200V 11A TO-220AB
|
|||
IRF9640
|
Intersil | 类似代替 |
MOSFET P-CH 200V 11A TO-220AB
|
|||
IRF9640PBF
|
Vishay Semiconductor | 功能相似 | TO-220 |
Power Field-Effect Transistor, 11A I(D), 200V, 0.5Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
|
||
IRF9640PBF
|
Vishay Precision Group | 功能相似 | TO-220 |
Power Field-Effect Transistor, 11A I(D), 200V, 0.5Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
|
||
IRF9640PBF
|
Vishay Siliconix | 功能相似 | TO-220-3 |
Power Field-Effect Transistor, 11A I(D), 200V, 0.5Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
|
||
IRF9640PBF
|
VISHAY | 功能相似 | TO-220-3 |
Power Field-Effect Transistor, 11A I(D), 200V, 0.5Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
|
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