Technical parameters/dissipated power: 88 W
Technical parameters/rise time: 52 ns
Technical parameters/Input capacitance (Ciss): 860pF @25V(Vds)
Technical parameters/descent time: 39 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3.7W (Ta), 88W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF9530S
|
VISHAY | 类似代替 | TO-263 |
MOSFET P-CH 100V 12A D2PAK
|
||
IRF9530S
|
Vishay Semiconductor | 类似代替 | 3 |
MOSFET P-CH 100V 12A D2PAK
|
||
IRF9530S
|
SEME-LAB | 类似代替 |
MOSFET P-CH 100V 12A D2PAK
|
|||
IRF9530S
|
International Rectifier | 类似代替 |
MOSFET P-CH 100V 12A D2PAK
|
|||
IRF9530S
|
Vishay Siliconix | 类似代替 | TO-263-3 |
MOSFET P-CH 100V 12A D2PAK
|
||
IRF9530STRLPBF
|
VISHAY | 类似代替 | TO-263-3 |
MOSFET P-CH 100V 12A D2PAK
|
||
IRF9530STRRPBF
|
Vishay Semiconductor | 类似代替 | TO-252-3 |
MOSFET P-CH 100V 12A D2PAK
|
||
IRF9530STRRPBF
|
VISHAY | 类似代替 | TO-252-3 |
MOSFET P-CH 100V 12A D2PAK
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review