Technical parameters/dissipated power: 3.7W (Ta), 88W (Tc)
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Input capacitance (Ciss): 860pF @25V(Vds)
Technical parameters/rated power (Max): 3.7 W
Technical parameters/dissipated power (Max): 3.7W (Ta), 88W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/length: 10.67 mm
External dimensions/width: 9.65 mm
External dimensions/height: 4.83 mm
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF9530SPBF
|
Vishay Intertechnology | 类似代替 |
MOSFET P-CH 100V 12A D2PAK
|
|||
IRF9530SPBF
|
Vishay Semiconductor | 类似代替 | TO-263 |
MOSFET P-CH 100V 12A D2PAK
|
||
IRF9530SPBF
|
Vishay Siliconix | 类似代替 | TO-263-3 |
MOSFET P-CH 100V 12A D2PAK
|
||
IRF9530STRLPBF
|
VISHAY | 完全替代 | TO-263-3 |
MOSFET P-CH 100V 12A D2PAK
|
||
IRF9530STRRPBF
|
Vishay Semiconductor | 完全替代 | TO-252-3 |
MOSFET P-CH 100V 12A D2PAK
|
||
IRF9530STRRPBF
|
VISHAY | 完全替代 | TO-252-3 |
MOSFET P-CH 100V 12A D2PAK
|
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