Technical parameters/drain source resistance: 300 mΩ
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 3.7 W
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): -12.0 A
Technical parameters/rise time: 52 ns
Technical parameters/reverse recovery time: 120 ns
Technical parameters/forward voltage (Max): 6.3 V
Technical parameters/Input capacitance (Ciss): 860pF @25V(Vds)
Technical parameters/rated power (Max): 3.7 W
Technical parameters/descent time: 39 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/operating temperature: -55℃ ~ 175℃
Technical parameters/dissipated power (Max): 3700 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 2000
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF9530NSPBF
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Infineon | 功能相似 | TO-263-3 |
-100V,-14A,200mΩ,P沟道功率MOSFET
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International Rectifier | 功能相似 | TO-263-3 |
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IRF9530NSTRLPBF
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