Technical parameters/polarity: | P-CH |
|
Technical parameters/drain source voltage (Vds): | 100 V |
|
Technical parameters/Continuous drain current (Ids): | 12A |
|
Technical parameters/Input capacitance (Ciss): | 860pF @25V(Vds) |
|
Technical parameters/rated power (Max): | 3.7 W |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Encapsulation parameters/Encapsulation: | TO-263 |
|
Dimensions/Packaging: | TO-263 |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF9530SPBF
|
Vishay Intertechnology | 类似代替 |
MOSFET P-CH 100V 12A D2PAK
|
|||
IRF9530SPBF
|
Vishay Semiconductor | 类似代替 | TO-263 |
MOSFET P-CH 100V 12A D2PAK
|
||
IRF9530SPBF
|
Vishay Siliconix | 类似代替 | TO-263-3 |
MOSFET P-CH 100V 12A D2PAK
|
||
IRF9530STRLPBF
|
VISHAY | 完全替代 | TO-263-3 |
MOSFET P-CH 100V 12A D2PAK
|
||
IRF9530STRRPBF
|
Vishay Semiconductor | 完全替代 | TO-252-3 |
MOSFET P-CH 100V 12A D2PAK
|
||
IRF9530STRRPBF
|
VISHAY | 完全替代 | TO-252-3 |
MOSFET P-CH 100V 12A D2PAK
|
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