Technical parameters/rated voltage (DC): 75.0 V
Technical parameters/rated current: 82.0 A
Technical parameters/drain source resistance: 13 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 230 W
Technical parameters/product series: IRF2807
Technical parameters/threshold voltage: 4 V
Technical parameters/input capacitance: 3820pF @25V
Technical parameters/drain source voltage (Vds): 75 V
Technical parameters/leakage source breakdown voltage: 75 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 82.0 A
Technical parameters/rise time: 64.0 ns
Technical parameters/Input capacitance (Ciss): 3820pF @25V(Vds)
Technical parameters/rated power (Max): 230 W
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.67 mm
External dimensions/height: 16.51 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2014/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
AUIRF2807
|
Infineon | 类似代替 | TO-220-3 |
N 通道功率 MOSFET,Infineon Infineon 的全面 AECQ-101 汽车资格单芯片 N 通道设备组合可满足许多应用中的多种电源要求。 该分立 HEXFET® 功率 MOSFET 系列包括表面安装和引线封装的 N 通道设备,外形可应对几乎任何板布局和热设计挑战。 在整个范围内,基准导通电阻减少了传导损耗,让设计人员可以提供最佳系统效率。 ### MOSFET 晶体管,Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度,且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品,从电动机控制到照明和家用电器。
|
||
IRF540NPBF
|
International Rectifier | 类似代替 | TO-220-3 |
INFINEON IRF540NPBF 晶体管, MOSFET, N沟道, 33 A, 100 V, 44 mohm, 10 V, 4 V
|
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IRF540NPBF
|
IRF | 类似代替 |
INFINEON IRF540NPBF 晶体管, MOSFET, N沟道, 33 A, 100 V, 44 mohm, 10 V, 4 V
|
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IRFZ14PBF
|
VISHAY | 功能相似 | TO-220-3 |
功率MOSFET Power MOSFET
|
||
IRFZ14PBF
|
Vishay Siliconix | 功能相似 | TO-220-3 |
功率MOSFET Power MOSFET
|
||
IRFZ14PBF
|
Infineon | 功能相似 |
功率MOSFET Power MOSFET
|
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IRFZ14PBF
|
LiteOn | 功能相似 | TO-220-3 |
功率MOSFET Power MOSFET
|
||
IRFZ14PBF
|
Vishay Precision Group | 功能相似 | TO-220 |
功率MOSFET Power MOSFET
|
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IRFZ48VPBF
|
International Rectifier | 类似代替 | TO-220-3 |
INFINEON IRFZ48VPBF 晶体管, MOSFET, N沟道, 72 A, 60 V, 12 mohm, 10 V, 4 V
|
||
STP140NF75
|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS STP140NF75 晶体管, MOSFET, N沟道, 120 A, 75 V, 7.5 mohm, 10 V, 4 V
|
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STP75NF75
|
ST Microelectronics | 功能相似 | TO-220-3 |
N 通道 STripFET™ II,STMicroelectronics STripFET™ MOSFET,带宽击穿电压范围,可提供超低栅极电话和低接通电阻。 ### MOSFET 晶体管,STMicroelectronics
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