Technical parameters/drain source resistance: 0.2 Ω
Technical parameters/dissipated power: 43 W
Technical parameters/input capacitance: 300pF @25V
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/leakage source breakdown voltage: 60 V
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220
External dimensions/length: 10.51 mm
External dimensions/packaging: TO-220
Physical parameters/operating temperature: -55℃ ~ 175℃
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFZ14
|
IRF | 类似代替 |
MOSFET N-CH 60V 10A TO-220AB
|
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IRFZ14
|
Vishay Semiconductor | 类似代替 | TO-220 |
MOSFET N-CH 60V 10A TO-220AB
|
||
IRFZ48VPBF
|
International Rectifier | 功能相似 | TO-220-3 |
INTERNATIONAL RECTIFIER IRFZ48VPBF 场效应管, N 通道, MOSFET, 60V, 72A TO-220AB 新
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