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Model AUIRF2807
Description N Channel power MOSFET, Infineon Infineon's comprehensive AECQ-101 automotive qualification single-chip N-channel device combination can meet various power requirements in many applications. The discrete HEXFET ® The power MOSFET series includes surface mount and lead packaged N-channel devices, with a form factor that can handle almost any board layout and thermal design challenge. Throughout the entire range, the reference on resistance reduces conduction losses, allowing designers to provide optimal system efficiency. ###MOSFET transistor, Infineon (IR) Infineon's comprehensive and robust combination of single and dual N-channel and P-channel devices provides fast switching speed and can meet various power requirements. The application scope ranges from AC-DC and DC-DC power supplies to audio and consumer electronics products, from motor control to lighting and household appliances.
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Brand: Infineon
Packaging TO-220-3
Delivery time
Packaging method Rail, Tube
Standard packaging quantity 1
4.05  yuan 4.05yuan
5+:
$ 5.4689
25+:
$ 5.0638
50+:
$ 4.7802
100+:
$ 4.6587
500+:
$ 4.5776
2500+:
$ 4.4764
5000+:
$ 4.4358
10000+:
$ 4.3751
Quantity
5+
25+
50+
100+
500+
Price
$5.4689
$5.0638
$4.7802
$4.6587
$4.5776
Price $ 5.4689 $ 5.0638 $ 4.7802 $ 4.6587 $ 4.5776
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9048) Minimum order quantity(5)
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Technical parameters/rated power: 230 W

Technical parameters/number of pins: 3

Technical parameters/drain source resistance: 0.013 Ω

Technical parameters/polarity: N-CH

Technical parameters/dissipated power: 230 W

Technical parameters/threshold voltage: 2 V

Technical parameters/drain source voltage (Vds): 75 V

Technical parameters/Continuous drain current (Ids): 82A

Technical parameters/rise time: 64 ns

Technical parameters/Input capacitance (Ciss): 3820pF @25V(Vds)

Technical parameters/descent time: 48 ns

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 230W (Tc)

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-220-3

External dimensions/length: 10.66 mm

External dimensions/width: 4.82 mm

External dimensions/height: 16.51 mm

External dimensions/packaging: TO-220-3

Physical parameters/materials: Silicon

Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Rail, Tube

Other/Manufacturing Applications: Power Management, Automotive

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: lead-free

Compliant with standard/REACH SVHC version: 2015/12/17

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
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