Technical parameters/rated voltage (DC): | 75.0 V |
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Technical parameters/rated current: | 120 A |
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Technical parameters/number of pins: | 3 |
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Technical parameters/drain source resistance: | 0.0075 Ω |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 310 W |
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Technical parameters/threshold voltage: | 4 V |
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Technical parameters/Input capacitance: | 5000 pF |
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Technical parameters/drain source voltage (Vds): | 75 V |
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Technical parameters/Leakage source breakdown voltage: | 75.0 V |
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Technical parameters/breakdown voltage of gate source: | ±20.0 V |
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Technical parameters/Continuous drain current (Ids): | 120 A |
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Technical parameters/rise time: | 140 ns |
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Technical parameters/Input capacitance (Ciss): | 5000pF @25V(Vds) |
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Technical parameters/rated power (Max): | 310 W |
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Technical parameters/descent time: | 90 ns |
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Technical parameters/operating temperature (Max): | 175 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 310W (Tc) |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-220-3 |
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Dimensions/Length: | 10.4 mm |
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Dimensions/Width: | 4.6 mm |
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Dimensions/Height: | 9.15 mm |
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Dimensions/Packaging: | TO-220-3 |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tube |
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Other/Manufacturi Alternative material
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