Technical parameters/rated voltage (DC): 60.0 V
Technical parameters/rated current: 75.0 A
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 8.5 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 140 W
Technical parameters/product series: IRF1010EZ
Technical parameters/threshold voltage: 4 V
Technical parameters/input capacitance: 2810pF @25V
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/leakage source breakdown voltage: 60 V
Technical parameters/Continuous drain current (Ids): 75.0 A
Technical parameters/rise time: 90.0 ns
Technical parameters/Input capacitance (Ciss): 2810pF @25V(Vds)
Technical parameters/rated power (Max): 140 W
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.67 mm
External dimensions/height: 9.02 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Rail, Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STP55NF06L
|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS STP55NF06L.. 场效应管, MOSFET, N沟道
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||
STP60NF06L
|
ST Microelectronics | 功能相似 | TO-220-3 |
N 通道 STripFET™ II，STMicroelectronics STripFET™ MOSFET，带宽击穿电压范围，可提供超低栅极电话和低接通电阻。 ### MOSFET 晶体管，STMicroelectronics
|
||
STP65NF06
|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS STP65NF06 晶体管, MOSFET, N沟道, 30 A, 60 V, 11.5 mohm, 10 V, 4 V
|
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