Technical parameters/rated power: 63 W
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 63W (Tc)
Technical parameters/drain source voltage (Vds): 650 V
Technical parameters/Continuous drain current (Ids): 7.3A
Technical parameters/rise time: 9 ns
Technical parameters/Input capacitance (Ciss): 440pF @100V(Vds)
Technical parameters/descent time: 13 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 63W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-262-3
External dimensions/length: 10.36 mm
External dimensions/width: 4.52 mm
External dimensions/height: 9.45 mm
External dimensions/packaging: TO-262-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
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新的革命高电压技术，超低栅极电荷定期额定雪崩 New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated
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SPI07N65C3XKSA1
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Infineon | 完全替代 | I2PAK-3 |
TO-262 N-CH 650V 7.3A
|
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