Technical parameters/polarity: | N-CH |
|
Technical parameters/threshold voltage: | 3 V |
|
Technical parameters/drain source voltage (Vds): | 650 V |
|
Technical parameters/Continuous drain current (Ids): | 7.3A |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | I2PAK-3 |
|
Dimensions/Packaging: | I2PAK-3 |
|
Other/Product Lifecycle: | Not Recommended for New Designs |
|
Other/Packaging Methods: | Tube |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IPI65R600C6
|
Infineon | 完全替代 | TO-262-3 |
Infineon CoolMOS™C6/C7 功率 MOSFET ### MOSFET 晶体管,Infineon Infineon 庞大且全面的 MOSFET 设备组合包括 OptiMOS™ 与 CoolMOS™ 系列。 这些产品提供最新一代最先进功率 MOSFET 中的顶级性能
|
||
IPI65R600C6XKSA1
|
Infineon | 完全替代 | TO-262-3 |
Infineon CoolMOS C6 系列 Si N沟道 MOSFET IPI65R600C6XKSA1, 7.3 A, Vds=700 V, 3引脚 I2PAK (TO-262)封装
|
||
SPI07N65C3HKSA1
|
Infineon | 完全替代 | TO-262-3-1 |
TO-262 N-CH 650V 7.3A
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review