Technical parameters/polarity: | N-CH |
|
Technical parameters/drain source voltage (Vds): | 650 V |
|
Technical parameters/Continuous drain current (Ids): | 7.3A |
|
Technical parameters/rise time: | 9 ns |
|
Technical parameters/Input capacitance (Ciss): | 440pF @100V(Vds) |
|
Technical parameters/rated power (Max): | 63 W |
|
Technical parameters/descent time: | 13 ns |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 63 W |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-262-3 |
|
Dimensions/Length: | 10.36 mm |
|
Dimensions/Width: | 4.52 mm |
|
Dimensions/Height: | 9.45 mm |
|
Dimensions/Packaging: | TO-262-3 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tube |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IPI60R520CP
|
Infineon | 类似代替 | TO-262-3 |
的CoolMOS功率晶体管 CoolMOS Power Transistor
|
||
SPI07N65C3
|
Infineon | 类似代替 | TO-262-3 |
新的革命高电压技术,超低栅极电荷定期额定雪崩 New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated
|
||
SPI07N65C3XKSA1
|
Infineon | 完全替代 | I2PAK-3 |
TO-262 N-CH 650V 7.3A
|
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