Technical parameters/rated voltage (DC): 650 V
Technical parameters/rated current: 7.30 A
Technical parameters/polarity: N-CH
Technical parameters/input capacitance: 790 pF
Technical parameters/gate charge: 27.0 nC
Technical parameters/drain source voltage (Vds): 650 V
Technical parameters/Continuous drain current (Ids): 7.30 A
Technical parameters/rise time: 3.5 ns
Technical parameters/Input capacitance (Ciss): 790pF @25V(Vds)
Technical parameters/rated power (Max): 83 W
Technical parameters/descent time: 7 ns
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-262-3
External dimensions/length: 10.2 mm
External dimensions/width: 4.5 mm
External dimensions/height: 9.45 mm
External dimensions/packaging: TO-262-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IPI65R600C6
|
Infineon | 类似代替 | TO-262-3 |
Infineon CoolMOS™C6/C7 功率 MOSFET ### MOSFET 晶体管，Infineon Infineon 庞大且全面的 MOSFET 设备组合包括 OptiMOS™ 与 CoolMOS™ 系列。 这些产品提供最新一代最先进功率 MOSFET 中的顶级性能
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IPI65R600C6XKSA1
|
Infineon | 类似代替 | TO-262-3 |
Infineon CoolMOS C6 系列 Si N沟道 MOSFET IPI65R600C6XKSA1, 7.3 A, Vds=700 V, 3引脚 I2PAK (TO-262)封装
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