Technical parameters/dissipated power: 270W (Tc)
Technical parameters/drain source voltage (Vds): 55 V
Technical parameters/rise time: 75 ns
Technical parameters/Input capacitance (Ciss): 3000pF @25V(Vds)
Technical parameters/descent time: 18 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 270W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Rail
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQP70N10
|
ON Semiconductor | 类似代替 | TO-220-3 |
FAIRCHILD SEMICONDUCTOR FQP70N10 晶体管, MOSFET, N沟道, 57 A, 100 V, 23 mohm, 10 V, 4 V
|
||
HUF75344P3
|
ON Semiconductor | 类似代替 | TO-220-3 |
UltraFET® MOSFET，Fairchild Semiconductor UItraFET® Trench MOSFET 组合了在功率转换应用中实现基准效率的特性。 该设备可耐受雪崩模式中的高能量，且二极管展现出非常短的反向恢复时间和积累电荷。 为高频率时的效率、最低 RDS（接通）、低 ESR 和低总栅极电荷和 Miller 栅极电荷进行了优化。 应用：高频直流-直流转换器、开关调节器、电动机驱动器、低电压总线开关和电源管理。 ### MOSFET 晶体管，Fairchild Semiconductor Fairchild 提供大量 MOSFET 设备组合，包括高电压 (>250V) 低电压 (Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性，以减少结电容和反向恢复电荷，无需额外外部元件即可保持系统启动和运行更长时间。
|
||
STP65NF06
|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS STP65NF06 晶体管, MOSFET, N沟道, 30 A, 60 V, 11.5 mohm, 10 V, 4 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review