Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.023 Ω
Technical parameters/dissipated power: 160 W
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/rise time: 470 ns
Technical parameters/Input capacitance (Ciss): 2500pF @25V(Vds)
Technical parameters/rated power (Max): 160 W
Technical parameters/descent time: 160 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 160 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.1 mm
External dimensions/width: 4.7 mm
External dimensions/height: 9.4 mm
External dimensions/packaging: TO-220-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Rail, Tube
Other/Manufacturing Applications: Motor drive and control, audio, power management
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
HUF75339P3
|
Intersil | 类似代替 |
HUF75339P3 系列 N沟道 55 V 0.012 Ohm UltraFET 功率Mosfet - TO-220AB
|
|||
HUF75339P3
|
Fairchild | 类似代替 | TO-220-3 |
HUF75339P3 系列 N沟道 55 V 0.012 Ohm UltraFET 功率Mosfet - TO-220AB
|
||
HUF75339P3
|
ON Semiconductor | 类似代替 | TO-220-3 |
HUF75339P3 系列 N沟道 55 V 0.012 Ohm UltraFET 功率Mosfet - TO-220AB
|
||
NTP35N15G
|
ON Semiconductor | 类似代替 | TO-220-3 |
37A,150V功率MOSFET
|
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