Technical parameters/dissipated power: | 285 W |
|
Technical parameters/drain source voltage (Vds): | 55 V |
|
Technical parameters/rise time: | 125 ns |
|
Technical parameters/Input capacitance (Ciss): | 3200pF @25V(Vds) |
|
Technical parameters/rated power (Max): | 285 W |
|
Technical parameters/descent time: | 57 ns |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 285 W |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-220-3 |
|
Dimensions/Length: | 10.67 mm |
|
Dimensions/Width: | 4.7 mm |
|
Dimensions/Height: | 16.3 mm |
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Dimensions/Packaging: | TO-220-3 |
|
Physical parameters/materials: | Silicon |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tube |
|
Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQP70N10
|
ON Semiconductor | 类似代替 | TO-220-3 |
ON Semiconductor QFET 系列 Si N沟道 MOSFET FQP70N10, 57 A, Vds=100 V, 3引脚 TO-220AB封装
|
||
HUF75339P3
|
Intersil | 类似代替 |
HUF75339P3 系列 N沟道 55 V 0.012 Ohm UltraFET 功率Mosfet - TO-220AB
|
|||
HUF75339P3
|
Fairchild | 类似代替 | TO-220-3 |
HUF75339P3 系列 N沟道 55 V 0.012 Ohm UltraFET 功率Mosfet - TO-220AB
|
||
HUF75339P3
|
ON Semiconductor | 类似代替 | TO-220-3 |
HUF75339P3 系列 N沟道 55 V 0.012 Ohm UltraFET 功率Mosfet - TO-220AB
|
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