Technical parameters/dissipated power: 110W (Tc)
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/rise time: 28 ns
Technical parameters/Input capacitance (Ciss): 1285pF @25V(Vds)
Technical parameters/descent time: 60 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 110W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Rail
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Intersil | 类似代替 |
20A ， 100V ， 0.054 Ohm的N通道，逻辑电平UltraFET功率MOSFET 20A, 100V, 0.054 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
|
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HUF76629D3S
|
Fairchild | 类似代替 | TO-252-3 |
20A ， 100V ， 0.054 Ohm的N通道，逻辑电平UltraFET功率MOSFET 20A, 100V, 0.054 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
|
||
HUF76629D3S
|
ON Semiconductor | 类似代替 | TO-252-3 |
20A ， 100V ， 0.054 Ohm的N通道，逻辑电平UltraFET功率MOSFET 20A, 100V, 0.054 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
|
||
HUF76629D3ST
|
Fairchild | 类似代替 | TO-252-3 |
HUF76629D3S: N 沟道，逻辑电平，UltraFET 功率 MOSFET，100V，20A，52mΩ
|
||
HUF76629D3ST
|
ON Semiconductor | 类似代替 | TO-252-3 |
HUF76629D3S: N 沟道，逻辑电平，UltraFET 功率 MOSFET，100V，20A，52mΩ
|
||
IXFK48N50
|
IXYS Semiconductor | 功能相似 | TO-264-3 |
IXYS SEMICONDUCTOR IXFK48N50 晶体管, MOSFET, N沟道, 48 A, 500 V, 100 mohm, 10 V, 4 V
|
||
SPP20N60S5
|
Infineon | 功能相似 | TO-220-3 |
Infineon CoolMOS™S5 功率 MOSFET 系列 ### MOSFET 晶体管，Infineon Infineon 庞大且全面的 MOSFET 设备组合包括 OptiMOS™ 与 CoolMOS™ 系列。 这些产品提供最新一代最先进功率 MOSFET 中的顶级性能
|
||
STP10P6F6
|
ST Microelectronics | 功能相似 | TO-220-3 |
P沟道60 V ， 0.15 I© （典型值） ， 10 A STripFETâ ?? ¢六DeepGATEâ ?? ¢功率MOSFET采用DPAK和TO- 220封装 P-channel 60 V, 0.15 Ω typ., 10 A STripFET⢠VI DeepGATE⢠Power MOSFET in DPAK and TO-220 packages
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