Technical parameters/rated voltage (DC): | 100 V |
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Technical parameters/rated current: | 20.0 A |
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Technical parameters/drain source resistance: | 41.5 mΩ |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 110 W |
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Technical parameters/drain source voltage (Vds): | 100 V |
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Technical parameters/Leakage source breakdown voltage: | 100 V |
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Technical parameters/breakdown voltage of gate source: | ±16.0 V |
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Technical parameters/Continuous drain current (Ids): | 20.0 A |
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Technical parameters/rise time: | 28 ns |
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Technical parameters/Input capacitance (Ciss): | 1285pF @25V(Vds) |
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Technical parameters/rated power (Max): | 110 W |
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Technical parameters/descent time: | 60 ns |
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Technical parameters/operating temperature (Max): | 175 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 110W (Tc) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-252-3 |
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Dimensions/Height: | 2.39 mm |
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Dimensions/Packaging: | TO-252-3 |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | Non-Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Customs information/ECCN code: | EAR99 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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ST Microelectronics | 功能相似 | TO-252-3 |
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