Technical parameters/rated voltage (DC): 200 V
Technical parameters/rated current: 9.00 A
Technical parameters/drain source resistance: 280 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.5W (Ta), 55W (Tc)
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/leakage source breakdown voltage: 200 V
Technical parameters/breakdown voltage of gate source: ±30.0 V
Technical parameters/Continuous drain current (Ids): 9.00 A
Technical parameters/Input capacitance (Ciss): 910pF @25V(Vds)
Technical parameters/rated power (Max): 2.5 W
Technical parameters/dissipated power (Max): 2.5W (Ta), 55W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDD2670
|
ON Semiconductor | 类似代替 | TO-252-3 |
FAIRCHILD SEMICONDUCTOR FDD2670 场效应管, MOSFET, N通道, 200V, 3.6A TO-252
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|
Rochester | 类似代替 | TO-252 |
FAIRCHILD SEMICONDUCTOR FDD2670 场效应管, MOSFET, N通道, 200V, 3.6A TO-252
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FQD18N20V2TM
|
ON Semiconductor | 类似代替 | TO-252-3 |
QFET® N 通道 MOSFET，11A 至 30A，Fairchild Semiconductor Fairchild Semiconductor 的新型 QFET® 平面 MOSFET 使用先进的专利技术为广泛的应用提供最佳的工作性能，包括电源、PFC（功率因数校正）、直流－直流转换器、等离子显示面板 (PDP)、照明镇流器和运动控制。 它们通过降低导通电阻 (RDS(on)) 来减少通态损耗，并通过降低栅极电荷 (Qg) 和输出电容 (Coss) 来减少切换损耗。 通过使用先进的 QFET® 工艺技术，Fairchild 可提供比竞争平面 MOSFET 设备更高的品质因素 (FOM)。 ### MOSFET 晶体管，Fairchild Semiconductor Fairchild 提供大量 MOSFET 设备组合，包括高电压 (>250V) 低电压 (Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性，以减少结电容和反向恢复电荷，无需额外外部元件即可保持系统启动和运行更长时间。
|
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HUF75925D3ST
|
Fairchild | 类似代替 | TO-252-3 |
11A ， 200V ， 0.275 Ohm的N通道， UltraFET功率MOSFET 11A, 200V, 0.275 Ohm, N-Channel, UltraFET Power MOSFETs
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