Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252
External dimensions/packaging: TO-252
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDD2670
|
ON Semiconductor | 功能相似 | TO-252-3 |
FAIRCHILD SEMICONDUCTOR FDD2670 场效应管, MOSFET, N通道, 200V, 3.6A TO-252
|
||
|
|
Rochester | 功能相似 | TO-252 |
FAIRCHILD SEMICONDUCTOR FDD2670 场效应管, MOSFET, N通道, 200V, 3.6A TO-252
|
||
FQD12N20LTM
|
Fairchild | 功能相似 | TO-252-3 |
FAIRCHILD SEMICONDUCTOR FQD12N20LTM 晶体管, MOSFET, N沟道, 9 A, 200 V, 0.22 ohm, 10 V, 2 V
|
||
FQD18N20V2TM
|
ON Semiconductor | 功能相似 | TO-252-3 |
晶体管, MOSFET, N沟道, 15 A, 200 V, 0.14 ohm, 10 V, 5 V
|
||
PSMN130-200D
|
Philips | 功能相似 |
N-channel TrenchMOS transistor
|
|||
PSMN130-200D
|
NXP | 功能相似 | DPAK |
N-channel TrenchMOS transistor
|
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