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Model FQD12N20LTM
Description FAIRCHILD SEMICONDUCTOR FQD12N20LTM 晶体管, MOSFET, N沟道, 9 A, 200 V, 0.22 ohm, 10 V, 2 V
Product QR code
Brand: Fairchild
Packaging TO-252-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
3.48  yuan 3.48yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6474) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

200 V

 

Technical parameters/rated current:

9.00 A

 

Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

220 mΩ

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

2.5 W

 

Technical parameters/threshold voltage:

2 V

 

Technical parameters/drain source voltage (Vds):

200 V

 

Technical parameters/Leakage source breakdown voltage:

200 V

 

Technical parameters/breakdown voltage of gate source:

±20.0 V

 

Technical parameters/Continuous drain current (Ids):

9.00 A

 

Technical parameters/rise time:

190 ns

 

Technical parameters/Input capacitance (Ciss):

1080pF @25V(Vds)

 

Technical parameters/rated power (Max):

2.5 W

 

Technical parameters/descent time:

120 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

2.5 W

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-252-3

 

Dimensions/Length:

6.6 mm

 

Dimensions/Width:

6.1 mm

 

Dimensions/Height:

2.3 mm

 

Dimensions/Packaging:

TO-252-3

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

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