Technical parameters/number of pins: 2
Technical parameters/drain source resistance: 0.1 Ω
Technical parameters/dissipated power: 70 mW
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/rise time: 8 ns
Technical parameters/Input capacitance (Ciss): 1228pF @100V(Vds)
Technical parameters/rated power (Max): 1.3 W
Technical parameters/descent time: 25 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3200 mW
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Other/Product Lifecycle: Discontinued at Digi-Key
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2018/06/27
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDD2670
|
ON Semiconductor | 功能相似 | TO-252-3 |
FAIRCHILD SEMICONDUCTOR FDD2670 场效应管, MOSFET, N通道, 200V, 3.6A TO-252
|
||
|
|
Rochester | 功能相似 | TO-252 |
FAIRCHILD SEMICONDUCTOR FDD2670 场效应管, MOSFET, N通道, 200V, 3.6A TO-252
|
||
FQD12N20LTM
|
Fairchild | 功能相似 | TO-252-3 |
FAIRCHILD SEMICONDUCTOR FQD12N20LTM 晶体管, MOSFET, N沟道, 9 A, 200 V, 0.22 ohm, 10 V, 2 V
|
||
FQD18N20V2TM
|
ON Semiconductor | 功能相似 | TO-252-3 |
晶体管, MOSFET, N沟道, 15 A, 200 V, 0.14 ohm, 10 V, 5 V
|
||
PSMN130-200D
|
Philips | 功能相似 |
N-channel TrenchMOS transistor
|
|||
PSMN130-200D
|
NXP | 功能相似 | DPAK |
N-channel TrenchMOS transistor
|
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