Technical parameters/polarity: P-CH
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 2.4A
Encapsulation parameters/Encapsulation: SuperSOT
External dimensions/packaging: SuperSOT
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDN304P
|
Fairchild | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR FDN304P 晶体管, MOSFET, P沟道, -2.4 A, -20 V, 52 mohm, -4.5 V, -800 mV
|
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|
|
Rochester | 功能相似 | SuperSOT |
FAIRCHILD SEMICONDUCTOR FDN304P 晶体管, MOSFET, P沟道, -2.4 A, -20 V, 52 mohm, -4.5 V, -800 mV
|
||
FDN304P
|
SHIKUES | 功能相似 | SOT-23 |
FAIRCHILD SEMICONDUCTOR FDN304P 晶体管, MOSFET, P沟道, -2.4 A, -20 V, 52 mohm, -4.5 V, -800 mV
|
||
FDN304P
|
ON Semiconductor | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR FDN304P 晶体管, MOSFET, P沟道, -2.4 A, -20 V, 52 mohm, -4.5 V, -800 mV
|
||
FDN304P_NL
|
Fairchild | 功能相似 | SuperSOT |
P-Channel 1.8V Specified PowerTrench MOSFET
|
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