Technical parameters/rated voltage (DC): -20.0 V
Technical parameters/rated current: -2.40 A
Technical parameters/rated power: 0.5 W
Technical parameters/number of channels: 1
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 52 mΩ
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 500 mW
Technical parameters/input capacitance: 1.31 nF
Technical parameters/gate charge: 12.0 nC
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/leakage source breakdown voltage: -200 V
Technical parameters/breakdown voltage of gate source: ±8.00 V
Technical parameters/Continuous drain current (Ids): 2.40 A
Technical parameters/rise time: 15 ns
Technical parameters/Input capacitance (Ciss): 1312pF @10V(Vds)
Technical parameters/rated power (Max): 460 mW
Technical parameters/descent time: 15 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 500mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 2.92 mm
External dimensions/width: 1.4 mm
External dimensions/height: 0.94 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
TI | 类似代替 |
ON Semiconductor PowerTrench 系列 Si P沟道 MOSFET FDN302P, 2.4 A, Vds=20 V, 3引脚 SOT-23封装
|
|||
FDN302P
|
Fairchild | 类似代替 | SOT-23-3 |
ON Semiconductor PowerTrench 系列 Si P沟道 MOSFET FDN302P, 2.4 A, Vds=20 V, 3引脚 SOT-23封装
|
||
|
|
SHIKUES | 类似代替 | SOT-23 |
ON Semiconductor PowerTrench 系列 Si P沟道 MOSFET FDN302P, 2.4 A, Vds=20 V, 3引脚 SOT-23封装
|
||
FDN304PZ
|
Fairchild | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR FDN304PZ 晶体管, MOSFET, P沟道, -2.4 A, -20 V, 0.036 ohm, -4.5 V, -800 mV
|
||
FDN304PZ
|
ON Semiconductor | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR FDN304PZ 晶体管, MOSFET, P沟道, -2.4 A, -20 V, 0.036 ohm, -4.5 V, -800 mV
|
||
FDN304PZ_NL
|
Fairchild | 功能相似 | SuperSOT |
P-Channel 1.8V Specified PowerTrench MOSFET
|
||
|
FDN304P_NL
|
Fairchild | 功能相似 | SuperSOT |
P-Channel 1.8V Specified PowerTrench MOSFET
|
||
NTR4101PT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR NTR4101PT1G 晶体管, MOSFET, P沟道, 3.2 A, -20 V, 0.07 ohm, -4.5 V, -720 mV
|
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