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Model FDN304PZ
Description FAIRCHILD SEMICONDUCTOR FDN304PZ 晶体管, MOSFET, P沟道, -2.4 A, -20 V, 0.036 ohm, -4.5 V, -800 mV
Product QR code
Brand: Fairchild
Packaging SOT-23-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0.6  yuan 0.6yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3300) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

-20.0 V

 

Technical parameters/rated current:

-2.40 A

 

Technical parameters/number of channels:

1

 

Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

0.036 Ω

 

Technical parameters/polarity:

P-Channel

 

Technical parameters/dissipated power:

500 mW

 

Technical parameters/Input capacitance:

1.31 nF

 

Technical parameters/gate charge:

12.0 nC

 

Technical parameters/drain source voltage (Vds):

20 V

 

Technical parameters/Leakage source breakdown voltage:

20 V

 

Technical parameters/breakdown voltage of gate source:

±8.00 V

 

Technical parameters/Continuous drain current (Ids):

-2.40 A

 

Technical parameters/rise time:

15 ns

 

Technical parameters/Input capacitance (Ciss):

1310pF @10V(Vds)

 

Technical parameters/rated power (Max):

460 mW

 

Technical parameters/descent time:

25 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

500mW (Ta)

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

SOT-23-3

 

Dimensions/Length:

2.92 mm

 

Dimensions/Width:

1.4 mm

 

Dimensions/Height:

0.94 mm

 

Dimensions/Packaging:

SOT-23-3

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

O

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