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Encapsulation parameters/Encapsulation: SOT-23
External dimensions/packaging: SOT-23
Other/Product Code: JZ1479G500799
Other/Classification: General Purpose Transistors
Other/Brands: Shi Ke
Other/Packaging: SOT-23
Other/views: 15605
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
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TI | 类似代替 |
ON Semiconductor PowerTrench 系列 Si P沟道 MOSFET FDN302P, 2.4 A, Vds=20 V, 3引脚 SOT-23封装
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FDN302P
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Fairchild | 类似代替 | SOT-23-3 |
ON Semiconductor PowerTrench 系列 Si P沟道 MOSFET FDN302P, 2.4 A, Vds=20 V, 3引脚 SOT-23封装
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SHIKUES | 类似代替 | SOT-23 |
ON Semiconductor PowerTrench 系列 Si P沟道 MOSFET FDN302P, 2.4 A, Vds=20 V, 3引脚 SOT-23封装
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FDN304PZ
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Fairchild | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR FDN304PZ 晶体管, MOSFET, P沟道, -2.4 A, -20 V, 0.036 ohm, -4.5 V, -800 mV
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FDN304PZ
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ON Semiconductor | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR FDN304PZ 晶体管, MOSFET, P沟道, -2.4 A, -20 V, 0.036 ohm, -4.5 V, -800 mV
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FDN304PZ_NL
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Fairchild | 功能相似 | SuperSOT |
P-Channel 1.8V Specified PowerTrench MOSFET
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FDN304P_NL
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Fairchild | 功能相似 | SuperSOT |
P-Channel 1.8V Specified PowerTrench MOSFET
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NTR4101PT1G
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ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR NTR4101PT1G 晶体管, MOSFET, P沟道, 3.2 A, -20 V, 0.07 ohm, -4.5 V, -720 mV
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