Encapsulation parameters/Encapsulation: SUPERSOT
External dimensions/packaging: SUPERSOT
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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TI | 类似代替 |
ON Semiconductor PowerTrench 系列 Si P沟道 MOSFET FDN302P, 2.4 A, Vds=20 V, 3引脚 SOT-23封装
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FDN302P
|
Fairchild | 类似代替 | SOT-23-3 |
ON Semiconductor PowerTrench 系列 Si P沟道 MOSFET FDN302P, 2.4 A, Vds=20 V, 3引脚 SOT-23封装
|
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|
SHIKUES | 类似代替 | SOT-23 |
ON Semiconductor PowerTrench 系列 Si P沟道 MOSFET FDN302P, 2.4 A, Vds=20 V, 3引脚 SOT-23封装
|
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FDN304PZ
|
Fairchild | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR FDN304PZ 晶体管, MOSFET, P沟道, -2.4 A, -20 V, 0.036 ohm, -4.5 V, -800 mV
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FDN304PZ
|
ON Semiconductor | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR FDN304PZ 晶体管, MOSFET, P沟道, -2.4 A, -20 V, 0.036 ohm, -4.5 V, -800 mV
|
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FDN304PZ_NL
|
Fairchild | 功能相似 | SuperSOT |
P-Channel 1.8V Specified PowerTrench MOSFET
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FDN304P_NL
|
Fairchild | 功能相似 | SuperSOT |
P-Channel 1.8V Specified PowerTrench MOSFET
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NTR4101PT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR NTR4101PT1G 晶体管, MOSFET, P沟道, 3.2 A, -20 V, 0.07 ohm, -4.5 V, -720 mV
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