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Model FDC645N
Description FAIRCHILD SEMICONDUCTOR FDC645N Transistor, MOSFET, N-channel, 5.5 A, 30 V, 0.023 ohm, 10 V, 1.4 V
Product QR code
Brand: Fairchild
Packaging TSOT-23-6
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
2.87  yuan 2.87yuan
5+:
$ 3.8786
25+:
$ 3.5913
50+:
$ 3.3901
100+:
$ 3.3040
500+:
$ 3.2465
2500+:
$ 3.1747
5000+:
$ 3.1459
10000+:
$ 3.1028
Quantity
5+
25+
50+
100+
500+
Price
$3.8786
$3.5913
$3.3901
$3.3040
$3.2465
Price $ 3.8786 $ 3.5913 $ 3.3901 $ 3.3040 $ 3.2465
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4679) Minimum order quantity(5)
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Technical parameters/rated voltage (DC): 30.0 V

Technical parameters/rated current: 5.50 A

Technical parameters/number of channels: 1

Technical parameters/number of pins: 6

Technical parameters/drain source resistance: 0.023 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 1.6 W

Technical parameters/threshold voltage: 1.4 V

Technical parameters/input capacitance: 1.46 nF

Technical parameters/gate charge: 13.0 nC

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/leakage source breakdown voltage: 30.0 V

Technical parameters/breakdown voltage of gate source: ±12.0 V

Technical parameters/Continuous drain current (Ids): 5.50 A

Technical parameters/rise time: 9 ns

Technical parameters/Input capacitance (Ciss): 1460pF @15V(Vds)

Technical parameters/rated power (Max): 800 mW

Technical parameters/descent time: 7 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 1.6W (Ta)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 6

Encapsulation parameters/Encapsulation: TSOT-23-6

External dimensions/length: 3 mm

External dimensions/width: 1.7 mm

External dimensions/height: 1 mm

External dimensions/packaging: TSOT-23-6

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standards/REACH SVHC standards: No SVHC

Compliant with standard/REACH SVHC version: 2015/06/15

Customs information/ECCN code: EAR99

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FDC645N FDC645N Fairchild 功能相似 TSOT-23-6
ON Semiconductor PowerTrench 系列 Si N沟道 MOSFET FDC645N, 5.5 A, Vds=30 V, 6引脚 SSOT封装
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FDC645N_F095 FDC645N_F095 ON Semiconductor 类似代替 TSOT-23-6
MOSFET N-CH 30V 5.5A 6-SSOT
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MOSFET N-CH 30V 5.5A 6-SSOT
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NXP PMN40LN,135 晶体管, MOSFET, N沟道, 2.5 A, 30 V, 0.032 ohm, 10 V, 1.5 V
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