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Model FDC645N_F095
Description MOSFET N-CH 30V 5.5A 6-SSOT
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Brand: ON Semiconductor
Packaging TSOT-23-6
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Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3076) Minimum order quantity(1)
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Technical parameters/dissipated power: 1.6W (Ta)

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/Input capacitance (Ciss): 1460pF @15V(Vds)

Technical parameters/dissipated power (Max): 1.6W (Ta)

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: TSOT-23-6

External dimensions/packaging: TSOT-23-6

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Compliant with standards/RoHS standards:

Compliant with standards/lead standards: lead-free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FDC645N FDC645N Fairchild 类似代替 TSOT-23-6
ON Semiconductor PowerTrench 系列 Si N沟道 MOSFET FDC645N, 5.5 A, Vds=30 V, 6引脚 SSOT封装
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