Technical parameters/number of pins: | 6 |
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Technical parameters/drain source resistance: | 0.032 Ω |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 1.75 W |
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Technical parameters/threshold voltage: | 1.5 V |
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Technical parameters/drain source voltage (Vds): | 30 V |
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Technical parameters/Continuous drain current (Ids): | 5.40 A |
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Technical parameters/rise time: | 7 ns |
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Technical parameters/Input capacitance (Ciss): | 555pF @25V(Vds) |
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Technical parameters/rated power (Max): | 1.75 W |
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Technical parameters/descent time: | 8 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 1.75W (Tc) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 6 |
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Encapsulation parameters/Encapsulation: | SOT-457 |
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Dimensions/Length: | 3.1 mm |
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Dimensions/Width: | 1.7 mm |
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Dimensions/Height: | 1 mm |
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Dimensions/Packaging: | SOT-457 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Obsolete |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with the REACH SVHC standard: | No SVHC |
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Compliant with standard/REACH SVHC version: | 2015/12/17 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDC653N
|
Fairchild | 功能相似 | TSOT-23-6 |
FAIRCHILD SEMICONDUCTOR FDC653N 晶体管, MOSFET, N沟道, 5 A, 30 V, 35 mohm, 10 V, 1.7 V
|
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