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Model FDC645N_F095
Description MOSFET N-CH 30V 5.5A 6-SSOT
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Brand: Fairchild
Packaging TSOT-23-6
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5867) Minimum order quantity(1)
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Technical parameters/number of channels: 1

Technical parameters/drain source resistance: 26 mΩ

Technical parameters/polarity: N-CH

Technical parameters/dissipated power: 1.6 W

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/leakage source breakdown voltage: 30 V

Technical parameters/Continuous drain current (Ids): 5.5A

Technical parameters/rise time: 9 ns

Technical parameters/Input capacitance (Ciss): 1460pF @15V(Vds)

Technical parameters/descent time: 9 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): 55 ℃

Technical parameters/dissipated power (Max): 1.6W (Ta)

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: TSOT-23-6

External dimensions/length: 2.9 mm

External dimensions/width: 1.6 mm

External dimensions/height: 1.1 mm

External dimensions/packaging: TSOT-23-6

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FDC645N FDC645N Fairchild 类似代替 TSOT-23-6
ON Semiconductor PowerTrench 系列 Si N沟道 MOSFET FDC645N, 5.5 A, Vds=30 V, 6引脚 SSOT封装
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