Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/rise time: 98 ns
Technical parameters/Input capacitance (Ciss): 1148pF @25V(Vds)
Technical parameters/rated power (Max): 125 W
Technical parameters/descent time: 56 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 125 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/length: 10.67 mm
External dimensions/width: 9.65 mm
External dimensions/height: 4.83 mm
External dimensions/packaging: TO-263-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FCB11N60FTM
|
Fairchild | 类似代替 | TO-263-3 |
600V N沟道MOSFET 600V N-Channel MOSFET
|
||
FCB11N60FTM
|
ON Semiconductor | 类似代替 | TO-263-3 |
600V N沟道MOSFET 600V N-Channel MOSFET
|
||
|
|
ETC | 功能相似 |
N 通道 MDmesh™,600V/650V,STMicroelectronics ### MOSFET 晶体管,STMicroelectronics
|
|||
STB11NM60T4
|
ST Microelectronics | 功能相似 | TO-263-3 |
N 通道 MDmesh™,600V/650V,STMicroelectronics ### MOSFET 晶体管,STMicroelectronics
|
||
STB13NM60N
|
ST Microelectronics | 功能相似 | TO-263-3 |
N 通道 MDmesh™,600V/650V,STMicroelectronics
|
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