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Model STB11NM60T4
Description N Channel MDmesh ™， 600V/650V, STMicroelectronics # # MOSFET transistor, STMicroelectronics
Product QR code
Brand: ST Microelectronics
Packaging TO-263-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
17.04  yuan 17.04yuan
5+:
$ 19.9310
50+:
$ 19.0792
200+:
$ 18.6022
500+:
$ 18.4830
1000+:
$ 18.3637
2500+:
$ 18.2275
5000+:
$ 18.1423
7500+:
$ 18.0571
Quantity
5+
50+
200+
500+
1000+
Price
$19.9310
$19.0792
$18.6022
$18.4830
$18.3637
Price $ 19.9310 $ 19.0792 $ 18.6022 $ 18.4830 $ 18.3637
Start batch production 5+ 50+ 200+ 500+ 1000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2628) Minimum order quantity(5)
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Technical parameters/rated voltage (DC): 600 V

Technical parameters/rated current: 11.0 A

Technical parameters/number of pins: 3

Technical parameters/drain source resistance: 0.4 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 160 W

Technical parameters/threshold voltage: 4 V

Technical parameters/input capacitance: 1000 pF

Technical parameters/drain source voltage (Vds): 650 V

Technical parameters/leakage source breakdown voltage: 600 V

Technical parameters/breakdown voltage of gate source: ±30.0 V

Technical parameters/Continuous drain current (Ids): 11.0 A

Technical parameters/rise time: 20 ns

Technical parameters/forward voltage (Max): 1.5 V

Technical parameters/Input capacitance (Ciss): 1000pF @25V(Vds)

Technical parameters/rated power (Max): 160 W

Technical parameters/descent time: 11 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -65 ℃

Technical parameters/dissipated power (Max): 160W (Tc)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-263-3

External dimensions/length: 10.4 mm

External dimensions/width: 10.4 mm

External dimensions/height: 4.6 mm

External dimensions/packaging: TO-263-3

Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standards/REACH SVHC standards: No SVHC

Customs information/ECCN code: EAR99

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FCB11N60TM FCB11N60TM Fairchild 功能相似 TO-263-3
FAIRCHILD SEMICONDUCTOR FCB11N60TM 功率场效应管, MOSFET, N沟道, 11 A, 600 V, 320 mohm, 10 V, 5 V
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FCB11N60TM FCB11N60TM ON Semiconductor 功能相似 TO-263-3
FAIRCHILD SEMICONDUCTOR FCB11N60TM 功率场效应管, MOSFET, N沟道, 11 A, 600 V, 320 mohm, 10 V, 5 V
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