Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.28 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 90 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/Continuous drain current (Ids): 11A
Technical parameters/rise time: 8 ns
Technical parameters/Input capacitance (Ciss): 790pF @50V(Vds)
Technical parameters/rated power (Max): 90 W
Technical parameters/descent time: 10 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 90W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/length: 10.75 mm
External dimensions/width: 10.4 mm
External dimensions/height: 4.6 mm
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Power Management, Power Management, Industrial, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STB80N20M5
|
ST Microelectronics | 类似代替 | TO-263-3 |
200V,0.019Ω,65A,N沟道功率MOSFET
|
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