Technical parameters/dissipated power: 125W (Tc)
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/Input capacitance (Ciss): 1490pF @25V(Vds)
Technical parameters/dissipated power (Max): 125W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FCB11N60
|
Fairchild | 功能相似 | TO-263 |
FAIRCHILD SEMICONDUCTOR FCB11N60 功率场效应管, MOSFET, N沟道, 11 A, 600 V, 320 mohm, 10 V, 5 V
|
||
FCB11N60TM
|
Fairchild | 类似代替 | TO-263-3 |
FAIRCHILD SEMICONDUCTOR FCB11N60TM 功率场效应管, MOSFET, N沟道, 11 A, 600 V, 320 mohm, 10 V, 5 V
|
||
FCB11N60TM
|
ON Semiconductor | 类似代替 | TO-263-3 |
FAIRCHILD SEMICONDUCTOR FCB11N60TM 功率场效应管, MOSFET, N沟道, 11 A, 600 V, 320 mohm, 10 V, 5 V
|
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