Technical parameters/number of pins: | 3 |
|
Technical parameters/drain source resistance: | 320 mΩ |
|
Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 125 W |
|
Technical parameters/threshold voltage: | 5 V |
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Technical parameters/drain source voltage (Vds): | 600 V |
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Technical parameters/Continuous drain current (Ids): | 11A |
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Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-263 |
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Dimensions/Packaging: | TO-263 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ |
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Other/Product Lifecycle: | Unknown |
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Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Compliant with the REACH SVHC standard: | No SVHC |
|
Compliant with standard/REACH SVHC version: | 2015/06/15 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FCB11N60FTM
|
Fairchild | 功能相似 | TO-263-3 |
600V N沟道MOSFET 600V N-Channel MOSFET
|
||
FCB11N60FTM
|
ON Semiconductor | 功能相似 | TO-263-3 |
600V N沟道MOSFET 600V N-Channel MOSFET
|
||
FCB11N60TM
|
Fairchild | 功能相似 | TO-263-3 |
FAIRCHILD SEMICONDUCTOR FCB11N60TM 功率场效应管, MOSFET, N沟道, 11 A, 600 V, 320 mohm, 10 V, 5 V
|
||
FCB11N60TM
|
ON Semiconductor | 功能相似 | TO-263-3 |
FAIRCHILD SEMICONDUCTOR FCB11N60TM 功率场效应管, MOSFET, N沟道, 11 A, 600 V, 320 mohm, 10 V, 5 V
|
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