Technical parameters/rated power: 1 W
Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 25.0 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.00 W
Technical parameters/drain source voltage (Vds): 350 V
Technical parameters/leakage source breakdown voltage: 350 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 120 mA
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/width: 4.19 mm
External dimensions/packaging: TO-92-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
Customs information/HTS code: 8541900000
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Chenmko | 类似代替 | SOT-323 |
Small Signal Field-Effect Transistor,
|
||
2N7002E
|
Vishay Siliconix | 类似代替 | SOT-23-3 |
Small Signal Field-Effect Transistor,
|
||
2N7002E
|
VISHAY | 类似代替 | SOT-23-3 |
Small Signal Field-Effect Transistor,
|
||
2N7002E
|
Ledil | 类似代替 |
Small Signal Field-Effect Transistor,
|
|||
2N7002E
|
Philips | 类似代替 | SOT-23 |
Small Signal Field-Effect Transistor,
|
||
2N7002E
|
NXP | 类似代替 | SOT-23 |
Small Signal Field-Effect Transistor,
|
||
2N7002E
|
Panasonic | 类似代替 | SOT-23-3 |
Small Signal Field-Effect Transistor,
|
||
2N7002K-7
|
Diodes Zetex | 功能相似 | SOT-23 |
2N7002K 系列 60 V 2 Ohm N 沟道 增强模式 Mosfet - SOT-23-3
|
||
BSS123-7-F
|
Diodes | 功能相似 | SOT-23-3 |
三极管
|
||
DN2535N3-G-P003
|
Microchip | 类似代替 | TO-226-3 |
Trans MOSFET N-CH 350V 0.12A 3Pin TO-92 T/R
|
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