Technical parameters/drain source resistance: 7.50 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 350mW (Ta)
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/leakage source breakdown voltage: 60.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 240 mA
Technical parameters/Input capacitance (Ciss): 21pF @5V(Vds)
Technical parameters/dissipated power (Max): 350mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Discontinued at Digi-Key
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N7000
|
Diodes | 类似代替 | TO-92-3 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
||
2N7000
|
ST Microelectronics | 类似代替 | TO-92-3 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
||
2N7000
|
TI | 类似代替 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
|||
|
|
Suptertex | 类似代替 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
|||
|
|
Supertex | 类似代替 | TO-92 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
||
2N7000
|
NTE Electronics | 类似代替 | TO-92 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
||
2N7000
|
Calogic | 类似代替 | TO-92 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
||
2N7000
|
InterFET | 类似代替 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
|||
2N7000
|
Major Brands | 类似代替 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
|||
2N7000
|
Diotec Semiconductor | 类似代替 | TO-92 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
||
2N7000
|
UTC | 类似代替 | TO-92 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
||
2N7000
|
National Semiconductor | 类似代替 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
|||
2N7000
|
ON Semiconductor | 类似代替 | TO-92-3 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
||
2N7002E-T1-E3
|
VISHAY | 类似代替 | SOT-23-3 |
Trans MOSFET N-CH 60V 0.24A 3Pin TO-236 T/R
|
||
2N7002E-T1-E3
|
Vishay Siliconix | 类似代替 | SOT-23-3 |
Trans MOSFET N-CH 60V 0.24A 3Pin TO-236 T/R
|
||
2N7002E-T1-E3
|
Vishay Semiconductor | 类似代替 | TO-236 |
Trans MOSFET N-CH 60V 0.24A 3Pin TO-236 T/R
|
||
2N7002E-T1-E3
|
Vishay Intertechnology | 类似代替 |
Trans MOSFET N-CH 60V 0.24A 3Pin TO-236 T/R
|
|||
BSS123-7-F
|
Diodes | 类似代替 | SOT-23-3 |
三极管
|
||
BSS123TA
|
Diodes Zetex | 功能相似 | SOT-23-3 |
DIODES INC. BSS123TA 晶体管, MOSFET, N沟道, 170 mA, 100 V, 6 ohm, 10 V, 2.2 V
|
||
BSS138-7-F
|
Multicomp | 功能相似 | SOT-23 |
N沟道增强型场效应晶体管低导通电阻低栅极阈值电压低输入电容开关速度快低输入/输出漏
|
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