Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 1.4 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 300 mW
Technical parameters/threshold voltage: 1.2 V
Technical parameters/drain source voltage (Vds): 50 V
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23
External dimensions/packaging: SOT-23
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N7002-7-F
|
Multicomp | 类似代替 | SOT-23 |
MULTICOMP 2N7002-7-F 场效应管, MOSFET, N沟道, 60V, 1.2Ω, 115mA, SOT-23
|
||
BSS138-7-F
|
Multicomp | 类似代替 | SOT-23 |
N沟道增强型场效应晶体管低导通电阻低栅极阈值电压低输入电容开关速度快低输入/输出漏
|
||
BSS138LT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR BSS138LT1G 晶体管, MOSFET, N沟道, 200 mA, 50 V, 3.5 ohm, 5 V, 1.5 V
|
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