Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | SOT-323 |
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Dimensions/Packaging: | SOT-323 |
|
Other/maximum source drain voltage Vds Drain Source Voltage: | 60V |
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Other/Maximum Gate Source Voltage Vgs (±) Gate Source Voltage: | 20V |
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Other/Maximum Drain Current Id Drain Current: | 250mA/0.25A |
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Other/source drain on resistance Ω Rds D Ω/Ohmin Sou Ω/Ohmce On State Ω/Ohmesis: | 1.7Ω/Ohm @250mA,10V |
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Other/turn-on voltage Vgs (th) Gate Source Threshold Voltage: | 1-2.5V |
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Other/dissipated power Pd Power Dissipation: | 200mW/0.2W |
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Other/Specification PDF: | __ |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N7000
|
Diodes | 类似代替 | TO-92-3 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
||
2N7000
|
ST Microelectronics | 类似代替 | TO-92-3 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
||
2N7000
|
TI | 类似代替 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
|||
|
|
Suptertex | 类似代替 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
|||
|
|
Supertex | 类似代替 | TO-92 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
||
2N7000
|
NTE Electronics | 类似代替 | TO-92 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
||
2N7000
|
Calogic | 类似代替 | TO-92 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
||
2N7000
|
InterFET | 类似代替 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
|||
2N7000
|
Major Brands | 类似代替 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
|||
2N7000
|
Diotec Semiconductor | 类似代替 | TO-92 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
||
2N7000
|
UTC | 类似代替 | TO-92 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
||
2N7000
|
National Semiconductor | 类似代替 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
|||
2N7000
|
ON Semiconductor | 类似代替 | TO-92-3 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
||
2N7002E-T1-E3
|
VISHAY | 类似代替 | SOT-23-3 |
Trans MOSFET N-CH 60V 0.24A 3Pin TO-236 T/R
|
||
2N7002E-T1-E3
|
Vishay Siliconix | 类似代替 | SOT-23-3 |
Trans MOSFET N-CH 60V 0.24A 3Pin TO-236 T/R
|
||
2N7002E-T1-E3
|
Vishay Semiconductor | 类似代替 | TO-236 |
Trans MOSFET N-CH 60V 0.24A 3Pin TO-236 T/R
|
||
2N7002E-T1-E3
|
Vishay Intertechnology | 类似代替 |
Trans MOSFET N-CH 60V 0.24A 3Pin TO-236 T/R
|
|||
BSS123-7-F
|
Diodes | 类似代替 | SOT-23-3 |
三极管
|
||
BSS123TA
|
Diodes Zetex | 功能相似 | SOT-23-3 |
DIODES INC. BSS123TA 晶体管, MOSFET, N沟道, 170 mA, 100 V, 6 ohm, 10 V, 2.2 V
|
||
BSS138-7-F
|
Multicomp | 功能相似 | SOT-23 |
N沟道增强型场效应晶体管低导通电阻低栅极阈值电压低输入电容开关速度快低输入/输出漏
|
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