Technical parameters/dissipated power: 1W (Tc)
Technical parameters/drain source voltage (Vds): 350 V
Technical parameters/Input capacitance (Ciss): 300pF @25V(Vds)
Technical parameters/rated power (Max): 1 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/packaging: TO-226-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DN2535N3-G
|
Microchip | 类似代替 | TO-226-3 |
MICROCHIP DN2535N3-G 晶体管, MOSFET, N沟道, 120 mA, 350 V, 17 ohm, 0 V
|
||
|
|
Suptertex | 类似代替 |
MICROCHIP DN2535N3-G 晶体管, MOSFET, N沟道, 120 mA, 350 V, 17 ohm, 0 V
|
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DN2535N3-G
|
Supertex | 类似代替 | TO-92-3 |
MICROCHIP DN2535N3-G 晶体管, MOSFET, N沟道, 120 mA, 350 V, 17 ohm, 0 V
|
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