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Model DN2535N3-G

Description MICROCHIP DN2535N3-G 晶体管, MOSFET, N沟道, 120 mA, 350 V, 17 ohm, 0 V

Brand: Microchip

Packaging TO-226-3

Delivery time

Packaging method Bag

Standard packaging quantity 1

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Technical parameters/rated power:	1 W
Technical parameters/number of pins:	3
Technical parameters/drain source resistance:	17 Ω
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	1 W
Technical parameters/drain source voltage (Vds):	350 V
Technical parameters/Continuous drain current (Ids):	0.12A
Technical parameters/Input capacitance (Ciss):	200pF @25V(Vds)
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	1W (Tc)
Encapsulation parameters/installation method:	Through Hole
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-226-3
Dimensions/Length:	5.2 mm
Dimensions/Width:	4.19 mm
Dimensions/Height:	5.33 mm
Dimensions/Packaging:	TO-226-3
Physical parameters/materials:	Silicon
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Unknown
Other/Packaging Methods:	Bag
Other/Manufacturing Applications:	Communication and Networking, Power Management, Power Management, Communications& Networking
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2015/12/17

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